KSC2881 features collector-emitter voltage : v ceo =120v current gain bandwidth productor : f t =120mhz collector dissipation : p c =1 to 2w in mounted on ceramic board absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5v collector current i c 800 ma base current i b 160 ma p c 500 mw p c * 1,000 mw junction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board (250mm 2 x0.8mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage b vceo i c =10a, i b =0 120 v emitter-base breakdown voltage b vebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =120v, i e =0 100 na emitter cut-off current i ebo v be =5v, i c =0 100 na dc current gain h fe v ce =5v, i c =100ma 80 240 collector-emitter saturation voltage v ce (sat) i c =500ma, i b =50ma 1.0 v base-emitter on voltage v be (on) v ce =5v, i c =500ma 1.0 v current gain bandwidth product f t v ce =5v, i c =100ma 120 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf h fe classification marking sco scy rank o y type 80 160 120 240 smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|
